aln ceramic basic chip product heat conduction and heat dissipation insulation high brightness LED
product name:aln ceramic basic chip
product description:
Aluminum nitride is one of the few materials with both good thermal conductivity and good electrical insulation properties, and has the following advantages : ( 1 ) Aluminum nitride has high thermal conductivity. The theoretical thermal conductivity at room temperature can reach 320W / ( m · K ), which is 8 ~ 10 times that of alumina ceramics. The thermal conductivity of actual production can also be as high as 200W / ( m · K ), which is conducive to heat dissipation in LEDs and improves LED performance. ( 2 ) The pansion coefficient of AlN is small, and the theoretical value is4.6 × 10-6 / K, which is similar to the thermal expansion coefficient of Si and GaAs, and the change rule is similar to the thermal expansion coefficient of Si. In addition, aluminum nitride matches the GaN lattice. Thermal matching and lattice matching are conducive to the good combination of the chip and the substrate during the preparation of high-power LED, which is the guarantee of high-performance high-power LED. ( 3 ) The energy gap width of AlN ceramics is 6.2eV, and the insulation is good. When applied to high-power LEDs, it does not need insulation treatment, which simplifies the process. ( 4 ) Aluminum nitride is wurtzite structure, combined with a strong covalent bond, so it has high hardness and high strength, good mechanical properties. In addition, aluminum nitride has good chemical stability and high temperature resistance. It can maintain stability when the temperature reaches 1000 °C in air atmosre, and has good stability when the temperature reaches 1400 °C in vacuum, which is conducive to sintering at high temperature, and the corrosion resistance can meet the subsequent process requirements.
product performance index:
| Performance content | performance index |
| Thermal conductivity(W/m.k) | ≥200 |
| Volume resistivity (Ω.cm) | ＞1013 |
| Dielectric constant[1MHz,25℃] | 9 |
| Dielectric loss [1MHz,25℃] | 3.8×10-4 |
| Electrical strength (KV/mm) | 17 |
| Volume density(g/cm3) | ≥3.30 |
| The surface roughness Ra(μm) | 0.3～0.5 |
| Coefficient of thermal expansion [20℃-300℃](10-6/℃) | 4.6 |
| The bending strength(MPa) | 320～330 |
| Elastic modulus (MPa) | 310～320 |
| Mohs hardness | 8 |
| Water absorption(%) | 0 |
| Warpage[～/25(length)] | 0.03～0.05 |
| Melting point | 2500 |
| Appearance / color grayish white | incanus |
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