Application:
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar .
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Specification:
Name | Molecular formula | Specification | Size | Relative density | Grain size | Defect rate | |
| Tungsten target | W | 4N（99.99%） | Inch | mm | ≥99% | ≯50µm | 0 |
5N（99.999%） | D（6,8,10,12） H（0.25,0.5,0.75） | Diameter 150～350 Thickness 6～25 | |||||
| Tungsten Titanium Target |  | 4N（99.99%） | ≥99% | ≯50µm | 0 | ||
4N5（99.995%） | |||||||
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