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IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.
IGBTs are used in various applications such as AC and DC motor drives, Unregulated Power Supply (UPS), Switch Mode Power Supplies (SMPS), traction motor control and induction heating, inverters, used to combine an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device, etc.