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GaN Substrate GaN On Sapphire Wafer Manufacturer

  • Origin: China
  • Supply Type: in stock
  • Min Order: 5

Supplier Info.

  • Employees Total 51-100
  • Annual Revenue

GaN Substrate GaN On Sapre Wafer Manufacturer

Homray Material Technology provide 2 inch and 4inch GaN -On-Sapre template wafer. The thickness of Sapre GaN wafer is 4.5um and 20um.

Gallium nitride, GaN substrate. GaN has a wide direct bandgap, strong atomic bonds and high thermal conductivity, etc., and it is a strong ability on antiradiation, Not only is the shortwavelength optoelectronic materials, Also the replacement materials of high temperature semiconductor device, GaN can be used to make blue and green LED, or violet, ultraviolet light LD, ultraviolet detectors and high-frequency high power electronic devices.

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