Free-Standing GaN Substrate Manufacturer 2 inch GaN wafer

Free-Standing GaN Substrate Manufacturer 2 inch GaN wafer

Homray Material has produced GaN substrates using relatively extreme growth conditions, with pressures of 15,000 atm and temperatures of 1600ºC. One growth can produce 20-30 crystals of 10 mm in diameter, exhibiting dislocation densities of only about 100 cm-2. "It's not a growth technique for millions of wafers, but just for special devices."