Conditions:
New and Original, Ready to ship (300 pcs), Available in warehouse out of US, ITAR Free and not need License Export for customer (My company filled license export and got it from US and Cree for project, these quantity is extra for my needs, so I can easily ship to customers)
Description:
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers exnt power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
| Peak Output Power | 100W |
| Application | X-Band |
| Typical Power Added Efficiency PAE | 45 % |
| Typical Power (PSAT) | 145 W |
| Power Gain | 10 dB |
| Operating Voltage | 40 V |
| Frequency | 7.9 - 9.6 GHz |
| Package Type | Flange |
| Internal Matching | Yes - 50Ω |
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Application:
Semiconductors, Discrete Semiconductors, Transistors, RF Transistors, RF JFET Transistors, X-Band, Wolfspeed / Cree CGHV96100F2
X-Band Radar Transistor - RF MOSFET HEMT - Cree's Gallium Nitride (GaN) transistors and MMICs for X-Band radar power amplifiers
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