Quick Details
- Processing Time:-
- Port:shanghai
- Supply Ability: -
- Brand Name:Homray Semi
China IGBT power modul manufacturer 650V IGBT
Homray Semiconductor Technology small power IGBT modules are designed for 600V/650V, 1200V with rated current range 10A
- 200A. Application for Photovoltaic - PV,Industrial frequency,Industrial servo etc.
Low switching losses
Low vce(sat)with positive temperature coefficient
Including fast & soft recovery
anti-parallel FWD
Low inductance case
High short circuit capability(10us)
Isolated heatsink using DBC
technology
Low vce(sat)with positive temperature
coefficient
Including fast & soft recovery
anti-parallel FWD
Maximum junction temperature
175℃
IGBT can be constructed with the equivalent
circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a
transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar
transistor, but the voltage is controlled like a MOSFET.
