Quick Details
- Size:4inch
- Processing Time:-
- Port:Shanghai
- Supply Ability: -
- Place of Origin:China
- Brand Name:Homray Material
GaN substrate supplier 4inch gallium nitride wafer
Gallium nitride, GaN substrate. GaN has a wide direct bandgap,
strong atomic bonds and high thermal conductivity, etc.,
and it is a strong ability on antiradiation,
Not only is the shortwavelength optoelectronic materials,
Also the replacement materials of high temperature semiconductor device,
GaN can be used to make blue and green LED, or violet, ultraviolet light LD,
ultraviolet detectors and high-frequency high-power electronic devices.
Compound Semiconductor (SiC, GaN)with
its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. SiC device and GaN devices can achieve low specific Ron and fast
switching/oscillation simultaneously because of its high critical electrical field.
