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Application:
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and
high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to
form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used
in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium
alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Specification:
Name
Molecular formula
Specification
Size
Relative density
Grain size
Defect rate
Tungsten target
W
4N(99.99%)
Inch
mm
≥99%
≯50µm
0
5N(99.999%)
D(6,8,10,12)
H(0.25,0.5,0.75)
Diameter 150~350
Thickness 6~25
Tungsten Titanium Target
4N(99.99%)
≥99%
≯50µm
0
4N5(99.995%)