DKDP Pockels Cell

FOB Price: USD 286 - 15000
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1 Pieces (Min. Order)
  • Supplying Ability3000 Pieces Per Year
  • Supplying TypeOem service
  • Model NumberNSP-D-08/15
  • Preferred Payment Method:T/T, L/C, Western Union

Quick Details

  • Processing Time:4-10 weeks
  • Port:Jinan
  • Supply Ability: 3000 Pieces Per Year
  • Place of Origin:china
  • Brand Name:NS
  • Model Number:NSP-D
  • Brand Name:NS
DKDP Pockels Cell Standard series:NSP-D-08/10/11/12/13/15 Jinan nanosecond photoelectric technology co., LTD., growing DKDP crystal independently. The optimized electro-optic Q switch made of DKDP crystal is suitable for electro-optic Q-modulated laser with wave length of 250nm-1300nm. By applying pulse voltage to Q switch, the number of inversion of upper level particles in laser material and Q factor of laser resonator can be controlled, so that the laser beam produced a peak power of several hundred megawatts to gigawatt level. Features: l  Deuterium concentration in KD*P crystal > 98%. l  The birefringence of crystal can be avoided by the optical axis direction of crystal. l  Without external stress assembly, the space distribution of photoelectric field is  uniform. l  High dynamic-static ratio: 85-90%. l  Good switch off performance, low light leak < 10mJ@500mJ, 1064nm, 10ns pulse width, 10Hz frequency. l  It has unique sealing assembly and good air tightness. l  High quality stability, instability < 1%. l  Wide operating temperature range: - 40 -60. l  On request,configurable ceramic aperture. Service: n  One year's guarantee period, the loss of customers caused within the guarantee period shall be borne by the supplier. n  Free maintenance. n  Products with special requirements can be tailored for customers. Specification Series: Model NSP-D-08 NSP-D-10 NSP-D-11 NSP-D-12 NSP-D-13 NSP-D-15 Physical parameters   Crystal diameter (mm) dia8 dia10 dia11 dia12 dia13 dia15 Clear aperture (mm) dia7.5 dia9.5 dia10.5 dia1.5 dia12.5 Фdia4.5 Cell size (mm) dia20x30 dia25.4x39 dia25.4x39 dia25.4x39 dia32x41 dia32×43 Damage threshold@1064nm, 10HZ, 10ns 10J/cm2@1064nm, 10Hz, 10ns pluse Electro-optic parameters   Contrast ratio 35dB Single pass insertion loss@1064nm <1.5% Capacitance  (pF) 3 5 6 6 8 9 Quarter wave voltage(@1064 nm), V ,DC 3200-3800 pulse width(ns) 10