Requirements for Polycrystalline Silicon Material Application: All the following material to be used in solar grade mono－crystalline silicon growing Requirements for Intrinsic/Virgin polycrystalline silicon Cleaning Granularity Chemical Properties P B C Total Content of Metals mm ppba ppba ppma ppba pickling 0-20≤10%；20-100≥90% ≤0.3 ≤0.06 ≤0.17 ≤1.0 Silicon Purity:99.9999% II.Requirements for mono-crystalline silicon ingot Tops & Tails Source CZ-process Type of material Ingot Top & End Size Na Na Treatment Un-treated Un-treated Resistivity >0.5 Ohm. cm >0.5 Ohm. cm [Oi] 8u00b5S >8u00b5S Conductivity P-type N-type Dopant material Boron Phosphorous III.Requirements for mono-crystalline silicon ingot Tops & Tails Source CZ-process Type of material Size Na Na Treatment Un-treated Un-treated Resistivity >0.5 Ohm. cm >0.5 Ohm. cm [Oi] 8u00b5S >8u00b5S Conductivity P-type N-type Dopant material Boron Phosphorous Quartz content Orientation Tolerance 10μs Min Length ≧100mm （Oi） ≦1.0*1018atoms/cm3 Surface Camber ≦0.2mm （CS） ≦5.0*1016atoms/cm3 Nd Dislocation ≦3000/ cm2 End Parallelism Show More